Epitaxial Growth of Polyethylene on Drawn Polyoxymethylene

The effect of high-energy electron beam on drawn and undrawn high density polyethylene fibers

HDPE monofilaments were obtained using different extruders and drawn by post-extruder equipments. After solidification, drawn and undrawn monofilaments (draw ratio 7:1) were irradiated with 10 MeV electron beams in air at room temperature at 25, 50, 75, 100 and 125 kGy dose ranges to induce a network structure. HDPE crosslinking was studied on the basis of gel content measurements. The fibers w...

Enhancement of the Laser Transmission Weldability between Polyethylene and Polyoxymethylene by Plasma Surface Treatment

Due to their large compatibility difference, polyethylene (PE) and polyoxymethylene (POM) cannot be welded together by laser transmission welding. In this study, PE and POM are pretreated using plasma that significantly enhances their laser transmission welding strength. To understand the mechanism underlying the laser welding strength enhancement, surface modification is analyzed using contact...

Epitaxial growth of Co3O3 on CoO(100)

Effects of crystalline microstructure on epitaxial growth.

The results of kinetic Monte Carlo simulations of epitaxial growth on fcc~100! and bcc~100! surfaces in which the correct crystal geometry is taken into account are reported. The existence of downward funneling to fourfold hollow sites leads to a downward current for large angles and to angle selection as observed in a variety of experiments. We have used our model to simulate Fe/Fe~100! deposi...

Epitaxial growth of InP nanowires on germanium.

The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...